NXU Series Voltage Level Translators
Publish Date: 2025-03-20
Nexperia NXU series voltage level translators are available in both unidirectional and bidirectional configurations.
See the performance gains achievable with SiC Schottky diodes using a hybrid construction comprising a SiC Schottky diode in parallel with a P-N diode.
Join us for an engaging webinar with solutions for energy harvesting and battery boosting applications with Nexperia’s latest solutions.
Superjunction power MOSFETs achieve a balance of performance, efficiency, and cost-effectiveness.
Considerations for circuit and PCB thermal design, electro-thermal simulation, and loss analysis for optimum MOSFET power density and performance.
Nexperia’s Silicon Carbide MOSFETs feature a very fast and robust intrinsic body diode with low forward voltage.
Nexperia's e-mode GaN FETs are designed for low- or high-power conversion applications, offering enhanced power system flexibility.
NPS4053 5.5 V Load Switch
Publish Date: 2023-09-01
Nexperia's NPS4053 switch with precision current limit offers active reverse voltage protection and built-in soft start in SOT457 or SOT8044-1 package.
NGW30T60M3DFQ 600 V Insulated Gate Bipolar Transistors
Publish Date: 2023-08-31
Nexperia's discrete insulated gate bipolar transistors (IGBTs) are a staple component of medium and high-voltage applications, such as industrial motor drives.
Battery Life Booster ICs
Publish Date: 2023-08-02
Nexperia’s battery life boosting ICs with adaptive power optimization are designed to extend the life of a typical lithium coin cell battery.
Nexperia’s Energy Harvesting PMIC uses the advanced Maximum Power Point Tracking (MPPT) algorithm to harvest energy for ultra-low power IoT sensors/nodes. MPPT uses an embedded hill-climbing algorithm to deliver the maximum power to the load.
Making IoT Implementations Cost-Effective and Sustainable.
How to Achieve Efficient Power Control in Space-Constrained Designs
Publish Date: 2023-06-13
By applying DFN0603 MOSFETs for power control and signal switching, designers can reduce size and power consumption in wearable and mobile devices.
e-mode GaN FETs
Publish Date: 2023-06-02
Nexperia e-mode GaN FETs offer superior switching performance, improved efficiency to AC/DC and DC/AC power conversion, and significant space and BOM savings.
NEH2000BY Energy Harvesting Power Management IC
Publish Date: 2023-05-18
Nexperia's NEH2000BY IC in an ultra-compact package is optimized to efficiently harvest energy from a wide range of ambient sources.
LFPAK56D Power MOSFETs
Publish Date: 2023-05-11
Nexperia’s cutting-edge copper clip technology allows for exceptional current handling, ultra-low package resistance and supreme robustness and reliability.
The Nexperia Recovery Rectifiers deliver a high power density while minimizing reverse recovery time and loss.
I²C General Purpose I/O (GPIO)
Updated: 2023-05-12
Nexperia's NCA9555 series GPIO expander is designed for a wide voltage range of 1.65 V to 5.5 V, with extremely low static power consumption.
Wide Band Gap semiconductors bring several advantages in power conversion, such as increased power density and efficiency, and reducing system size and weight.
Recovery Rectifiers in CFP15B
Publish Date: 2023-02-17
Nexperia's recovery rectifiers in CFP15B feature high power capability due to their clip-bond technology.