Image of Nexperia's PMCM4401VPE MOSFET NXU Series Voltage Level Translators Publish Date: 2025-03-20

Nexperia NXU series voltage level translators are available in both unidirectional and bidirectional configurations.

Enhance SiC Device Efficiency Using Merged-Pin Schottky Diodes Publish Date: 2025-03-12

See the performance gains achievable with SiC Schottky diodes using a hybrid construction comprising a SiC Schottky diode in parallel with a P-N diode.

image of Advance your strategies for energy harvesting and battery management webinar Advance your strategies for energy harvesting and battery management

Join us for an engaging webinar with solutions for energy harvesting and battery boosting applications with Nexperia’s latest solutions.

Evaluating Superjunction Power MOSFETs for Performance and Efficiency Publish Date: 2024-06-12

Superjunction power MOSFETs achieve a balance of performance, efficiency, and cost-effectiveness.

Maximize Power Density and Performance in Switching Converter Applications With Dual MOSFETs Publish Date: 2024-02-27

Considerations for circuit and PCB thermal design, electro-thermal simulation, and loss analysis for optimum MOSFET power density and performance.

Image of Nexperia Silicon Carbide (SiC) MOSFETs for Industrial Applications Silicon Carbide (SiC) MOSFETs for Industrial Applications Publish Date: 2023-12-21

Nexperia’s Silicon Carbide MOSFETs feature a very fast and robust intrinsic body diode with low forward voltage.

Nexperia- e-mode GaN FETs | First Look

Nexperia's e-mode GaN FETs are designed for low- or high-power conversion applications, offering enhanced power system flexibility.

Image of Nexperia's NPS4053 5.5 V Load Switch NPS4053 5.5 V Load Switch Publish Date: 2023-09-01

Nexperia's NPS4053 switch with precision current limit offers active reverse voltage protection and built-in soft start in SOT457 or SOT8044-1 package.

Image of Nexperia's NGW30T60M3DFQ 600 V Insulated Gate Bipolar Transistors NGW30T60M3DFQ 600 V Insulated Gate Bipolar Transistors Publish Date: 2023-08-31

Nexperia's discrete insulated gate bipolar transistors (IGBTs) are a staple component of medium and high-voltage applications, such as industrial motor drives.

Image of Nexperia's Battery Life Booster ICs Battery Life Booster ICs Publish Date: 2023-08-02

Nexperia’s battery life boosting ICs with adaptive power optimization are designed to extend the life of a typical lithium coin cell battery.

Nexperia’s Energy Harvesting PMIC uses the advanced Maximum Power Point Tracking (MPPT) algorithm to harvest energy for ultra-low power IoT sensors/nodes. MPPT uses an embedded hill-climbing algorithm to deliver the maximum power to the load.

Image of How to Achieve Efficient Power Control in Space-Constrained Designs How to Achieve Efficient Power Control in Space-Constrained Designs Publish Date: 2023-06-13

By applying DFN0603 MOSFETs for power control and signal switching, designers can reduce size and power consumption in wearable and mobile devices.

Image of Nexperia's e-mode GaN FETs e-mode GaN FETs Publish Date: 2023-06-02

Nexperia e-mode GaN FETs offer superior switching performance, improved efficiency to AC/DC and DC/AC power conversion, and significant space and BOM savings.

Image of Nexperia's NEH2000BY Energy Harvesting Power Management IC NEH2000BY Energy Harvesting Power Management IC Publish Date: 2023-05-18

Nexperia's NEH2000BY IC in an ultra-compact package is optimized to efficiently harvest energy from a wide range of ambient sources.

Image of Nexperia's LFPAK56D Power MOSFETs LFPAK56D Power MOSFETs Publish Date: 2023-05-11

Nexperia’s cutting-edge copper clip technology allows for exceptional current handling, ultra-low package resistance and supreme robustness and reliability.

The Nexperia Recovery Rectifiers deliver a high power density while minimizing reverse recovery time and loss.

Image of Nexperia's I²C General Purpose I/O GPIO I²C General Purpose I/O (GPIO) Updated: 2023-05-12

Nexperia's NCA9555 series GPIO expander is designed for a wide voltage range of 1.65 V to 5.5 V, with extremely low static power consumption.

Image of Wide Band Gap Semiconductors in Aerospace and Satellite Applications Wide Band Gap Semiconductors in Aerospace and Satellite Applications Publish Date: 2023-03-22

Wide Band Gap semiconductors bring several advantages in power conversion, such as increased power density and efficiency, and reducing system size and weight.

Image of Nexperia's Recovery Rectifiers in CFP15B Recovery Rectifiers in CFP15B Publish Date: 2023-02-17

Nexperia's recovery rectifiers in CFP15B feature high power capability due to their clip-bond technology.