Littelfuse SiC MOSFETs, MOS-gated thyristors, and rectifiers enable efficient, reliable SMPS designs for EV chargers, solar inverters, and motor drives.
IXTx60N20X4 Ultra Junction X4-Class Discrete Power MOSFETs
Publish Date: 2022-06-21
Littelfuse's IXTx60N20X4 Ultra Junction X4-class discrete power MOSFETs enable designers to achieve higher efficiency and increased power density.
SV6050xA2 Series 50 A High Junction Temperature SCRs
Publish Date: 2022-06-08
IXYS’ SV6050xA2 series 50 A SCRs are ideal for unidirectional switch applications such as phase controls, motor speed controls, and inrush current controllers.
450 V to 900 V Switchable Current Regulators – S-Class Series
Publish Date: 2022-04-18
IXYS switchable current regulators are useful and versatile devices targeted for use in communications, networking, and power conversion circuits.
Ultra Junction 650 V X3 Class Power MOSFETs
Publish Date: 2022-04-15
IXYS' ultra junction X3 Class Power MOSFETs have low reverse recovery charge and are capable of removing all the leftover energies during high-speed switching.
High-Power 600 V to 2,000 V Bridge Rectifiers for 3-Phase Applications
Publish Date: 2022-03-08
IXYS' three-phase bridge rectifier is a diode commonly used for converting an alternating current (AC) input into a direct current(DC) output.
600 V Ultra Junction X3 HiPerFET™ Discrete MOSFETs
Publish Date: 2021-12-07
The IXYS 600 V ultra junction X3-class HiPerFET™ discrete N-Channel MOSFETs provide an excellent figure of merit (on-resistance times gate charge).
High Powered Thyristor Modules – MCMA Series
Publish Date: 2021-11-04
MCMA series high-powered thyristor modules from IXYS, a Littelfuse Technology, are optimized for phase leg control for high-powered applications.
Power Semiconductor Rectifier Modules for Phase Control – MDD Series
Publish Date: 2021-08-11
IXYS has simplified its power rectifiers by designing a semiconductor into a conventional plastic housing with a multilayer modular construction.
Fast Recovery Epitaxial Diode (FRED) - DSEI Series
Publish Date: 2021-08-11
IXYS' DSEI series FRED diodes are suitable for applications such as data communication and telecommunication system equipment.
IXYS' Power Semiconductor 2020-2021 Product Catalog
200 V X4-Class N-Channel Ultra Junction Power MOSFETs with HiPerFET™
Publish Date: 2021-06-14
IXYS power MOSFETs are developed using a charge compensation principle and proprietary process technology resulting in significantly reduced RDS(on) and Qg.
This application note discusses various mounting solutions for Surface Mount Power Device (SMPD) packages.
This application note describes the design and performance of a 60 W auxiliary power supply with wide input voltage for industrial applications.
In this application note, we review a selection of common and emerging topologies for MV drives, followed by a study of the structure and features of PP-IGBT.
This paper discusses the optimization of freewheeling device implementation for SiC MOSFETs in a half-bridge configuration.
1200 V GenX4™ XPT™ IGBTs
Publish Date: 2021-01-08
GenX4™ XPT™ IGBTs from IXYS enable designers to use multiple devices in parallel to meet higher current requirements.
This application note provides general guidelines for designing an off-line LED driver using the MXHV9910.
Offered in various and other configurations for a wide range of currents blocking/off-state voltages, packages, and triggering.
The device uses external components to satisfy design switching requirements, which enables the designer to choose from a great number of MOSFETs.
