Optimal Motor Drive Systems

Infineon Technologies offers optimized technologies for motor drive systems for electrical motors such as the IGBT7, that perfectly matches the need of driver applications such as overload and switching speed control. With increased awareness of the cost of energy, both in its environmental and financial terms, the need for higher levels of efficiency in the way electricity is utilized to drive motors becomes more apparent. High energy saving is possible with process optimization enabled by speed and torque control of the motor drive systems for electrical motors.

The 1200 V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on the latest micro-pattern trenches technology, which provides strongly reduced losses and offers a high level of controllability. The chip is specially optimized for industrial drive applications, which means much lower static losses, higher power density, and softer switching. Additionally, by raising the allowed maximum operating temperature of +175°C in the power module, a significant increase in power density can be obtained.

Infineon introduces CoolSiC™ MOSFET technology, which enables different product designs. In comparison to traditional silicon-based switches like IGBTs and MOSFETs, the Silicon Carbide (SiC) MOSFET offers a series of advantages in performance, reliability, and ease of use. For system designers SiC opens up new degrees of flexibility for designers to harness never before seen levels of efficiency and reliability.

CIPOS™ Maxi 1200 V, 10 A three-phase IGBT-based intelligent power module with open emitter in DIP 36x23D package provides a fully-featured compact inverter solution with excellent thermal conduction. Some applications include motor drives, such as industrial drives, fans and pumps, HVAC, and active filters.

EiceDRIVER™ galvanically isolated gate drivers use magnetically-coupled coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. It offers functional, basic, and reinforced isolated UL 1577 and VDE 0884 certified products. The isolation allows very large voltage swings (e.g., ±1200 V).

Infineon's silicon-on-insulator (SOI) technology is a high-voltage, level-shift technology providing unique, measurable and superior advantages, including integrated bootstrap-diode (BSD) and is robust to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that cause latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.