onsemi's NIV1161 is designed to protect high-speed data lines from ESD as well as short-to-vehicle battery situations. The ultra-low-capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high-speed data lines while the low RDS(on) FET limits distortion on the signal lines. The flow-through style package allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between high-speed differential lines, such as USB and LVDS protocols.
| Features |
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- Low capacitance (0.65 pF typ, I/O to GND)
- Diode capacitance matching between I/Os: 1% (typ.)
- Optimized layout for excellent high-speed signal integrity
- AEC-Q101 qualified and PPAP capable
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- Protection for the following IEC standards: IEC 61000-4-2 (Level 4)
- Low ESD clamping voltage
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| Typical Applications |
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- Automotive high-speed signal pairs
- USB2.0/3.0
- LVDS
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