STGWA25IH135DF2/STGWA35IH135DF2 Trench Gate Field-Stop 1,350 V IGBTs

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Product Highlights > STGWA25IH135DF2/STGWA35IH135DF2 Trench Gate Field-Stop 1,350 V IGBTs

            STGWA25IH135DF2/STGWA35IH135DF2 Trench Gate Field-Stop 1,350 V IGBTs
                    STMicroelectronics' 1,350 V IH2 series have been developed using an advanced trench gate field-stop structure
    

Image of STMicroelectronics STGWA25IH135DF2, STGWA35IH135DF2 Trench Gate Field-Stop 1,350 V IGBTs STMicroelectronics' STGWA25IH135DF2 and STGWA35IH135DF2 IGBT 1,350 V IH2 series have been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft commutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and soft-switching applications.

Features

Designed for soft-commutation
Maximum junction temperature: T_J = +175°C
V_CE(sat) = 1.7 V (typ.) at I_C = 20 A
Minimized tail current

Tight parameter distribution
Low thermal resistance
Very low drop and soft recovery co-packaged diode
Positive V_CE(sat) temperature coefficient

Published: 2023-08-07

STGWA25IH135DF2/STGWA35IH135DF2 Trench Gate Field-Stop 1,350 V IGBTs

STMicroelectronics' 1,350 V IH2 series have been developed using an advanced trench gate field-stop structure

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