650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs
Toshiba's SiC is technology designed for high-efficiency power supply applications
Toshiba’s 3rd Generation 650 V and 1,200 V silicon carbide (SiC) MOSFETs are designed for high-power industrial applications such as 400 V and 800 VAC input AC/DC power supplies, photovoltaic (PV) inverters, and bi-directional DC/DC converters for uninterruptible power supplies (UPS).
These MOSFETs help to reduce power consumption and improved power density - due to SiC technology which allows devices to deliver higher voltage resistance, faster switching, and lower On-resistance. Toshiba’s third-generation chip-design offers enhanced reliability. The 650 V products feature an input capacitance (CISS) of 4,850 pF (typ.), a low gate-input charge (Qg) of 128 nC (typ.), and a drain-to-source On-resistance (RDS(ON)) of just 15mΩ (typ.).
In addition, 1,200 V products offer similarly low input capacitance (CISS) of 6000 pF (typ.), a gate-input charge (Qg) of 158 nC (typ.), and a drain-to-source On-resistance (RDS(ON)) of 15 mΩ (typ.).
Both 650 V and 1,200 V SiC MOSFETs are offered in the industry-standard three-lead TO-247 package.
- Low RON, RONQgd
- RON*Qgd is reduced by 80% from Toshiba’s 2nd generation to 3rd generation
- Competitive RON*Qgd and switching performance
- Low VF
- Built-in Schottky barrier diode technology to offer ultra-low VF
- High-reliability with updated cell design
- Wide VGSS ratings help improve design reliability and make design easier
- VGSS: -10 V ~ 25 V (recommended: 18 V)
- Low -resistance and a higher gate threshold voltage (Vth) helps prevent malfunctions like accidental turn on
- Industrial motor drives
- Battery chargers
- AC/DC and DC/DC converters
- Power factor correction circuit
- Energy storage systems
- Solar energy
- Uninterruptable power supplies
650 V and 1,200 V 3rd Generation Silicon Carbide MOSFETs
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | TW015N65C,S1F | G3 650V SIC-MOSFET TO-247 15MOH | 0 - Immediate | $59.60 | View Details |
| | TW027N65C,S1F | G3 650V SIC-MOSFET TO-247 27MOH | 0 - Immediate | $27.29 | View Details |
| | TW048N65C,S1F | G3 650V SIC-MOSFET TO-247 48MOH | 0 - Immediate | $19.69 | View Details |
| | TW083N65C,S1F | G3 650V SIC-MOSFET TO-247 83MOH | 0 - Immediate | $16.28 | View Details |
| | TW107N65C,S1F | G3 650V SIC-MOSFET TO-247 107MO | 0 - Immediate | $11.87 | View Details |
| | TW015N120C,S1F | G3 1200V SIC-MOSFET TO-247 15MO | 0 - Immediate | $77.38 | View Details |
| | TW030N120C,S1F | G3 1200V SIC-MOSFET TO-247 30MO | 0 - Immediate | $38.09 | View Details |
| | TW045N120C,S1F | G3 1200V SIC-MOSFET TO-247 45MO | 0 - Immediate | $28.26 | View Details |
| | TW060N120C,S1F | G3 1200V SIC-MOSFET TO-247 60MO | 0 - Immediate | $22.96 | View Details |
| | TW140N120C,S1F | G3 1200V SIC-MOSFET TO-247 140M | 0 - Immediate | $13.49 | View Details |
