TPH9R00CQH N-Channel Power MOSFET
Toshiba’s MOSFET is suitable for use in switching power supplies for industrial equipment
Toshiba’s 150 V N-channel power MOSFET TPH9R00CQH uses the latest generation U-MOS X process and is suitable for use in switching power supplies for industrial equipment, including those deployed in data centers and communications base stations.
The TPH9R00CQH has a drain-source ON-resistance of 9.0 mΩ (max) at VGS=10 V, due to optimization of the MOSFET’s structure. In addition, spike voltage between the drain and source at switching operation is reduced, helping to lower the electromagnetic interference (EMI) in switching power supplies. This device operates with channel temperatures up to +175°C.
Features
- Industry-leading low loss (improved trade-off between the ON-resistance and gate switch charge and output charge)
- Industry-leading ON-resistance: RDS(ON)=9.0 mΩ (max) at VGS=10 V
- High channel temperature rating: Tch (max) = +175°C
Applications
- Power supplies for communications equipment
- Switching power supplies (high-efficiency DC/DC converters, etc.)
TPH9R00CQH N-Channel Power MOSFET
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | TPH9R00CQH,LQ | UMOS10 SOP-ADV(N) 150V 9MOHM | 0 - Immediate | $2.49 | View Details |
Published: 2022-03-22
