Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
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RN1105MFV,L3F

DigiKey Part Number
RN1105MFV,L3FTR-ND - Tape & Reel (TR)
Manufacturer
Manufacturer Part Number
RN1105MFV,L3F
Description
TRANS PREBIAS NPN 50V 0.1A VESM
Customer Reference
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Datasheet
 Datasheet
EDA/CAD Models
RN1105MFV,L3F Models
Product Attributes
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Category
Resistor - Emitter Base (R2)
47 kOhms
Manufacturer
Toshiba Semiconductor and Storage
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Packaging
Tape & Reel (TR)
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Part Status
Active
Current - Collector Cutoff (Max)
500nA
Transistor Type
NPN - Pre-Biased
Power - Max
150 mW
Current - Collector (Ic) (Max)
100 mA
Mounting Type
Surface Mount
Voltage - Collector Emitter Breakdown (Max)
50 V
Package / Case
SOT-723
Resistors Included
R1 and R2
Supplier Device Package
VESM
Resistor - Base (R1)
2.2 kOhms
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Unavailable
This product is no longer carried by DigiKey.