TK10E60W,S1VX
DigiKey Part Number	TK10E60WS1VX-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Part Number	TK10E60W,S1VX
Description	MOSFET N-CH 600V 9.7A TO220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 9.7A (Ta) 100W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK10E60W,S1VX Models

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Category Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs	Vgs(th) (Max) @ Id 3.7V @ 500µA
Mfr Toshiba Semiconductor and Storage	Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Series DTMOSIV	Vgs (Max) ±30V
Packaging Tube	Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V
Part Status Active	Power Dissipation (Max) 100W (Tc)
FET Type N-Channel	Operating Temperature 150°C (TJ)
Technology MOSFET (Metal Oxide)	Mounting Type Through Hole
Drain to Source Voltage (Vdss) 600 V	Supplier Device Package TO-220
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)	Package / Case TO-220-3
Drive Voltage (Max Rds On, Min Rds On) 10V	Base Product Number TK10E60
Rds On (Max) @ Id, Vgs 380mOhm @ 4.9A, 10V

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