1200 V Silicon Carbide MOSFETs and Diodes

Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high-voltage DC/DC converters, and more.

1200 V silicon carbide MOSFETs: Based on 3rd generation technology, Wolfspeed's C3M™ 1200 V MOSFETs include a wide variety of on-resistances and package options that enable designers to select the right part for their applications. The 1200 V MOSFETs are designed for low R_DS(ON) and increased C_GS/C_GD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear C_OSS behavior.

1200 V silicon carbide Schottky diodes: Wolfspeed's 1200 V diodes also come in a variety of package options and current ratings. The diodes feature MPS (merged PiN Schottky) design, which is more robust and reliable than standard Schottky barrier diodes. They are designed to achieve essentially no switching losses, reduce heat-sink requirements, and maintain higher efficiency. The 1200 V diodes can be easily paralleled for increased design flexibility.

Pairing Wolfspeed's 1200 V SiC diodes with SiC MOSFETs creates a powerful combination of higher efficiency in demanding applications. The efficiency gained by moving from a silicon-based solution to silicon carbide can reduce system size, weight, complexity, and cost in most high-power applications.