MOSFETs
SiA456DJ
Single 200 V N-Channel Power MOSFET
Features
- 200 V n-channel technology with low threshold voltage
- Maximum current of 0.9 A
- 2 mm x 2 mm PowerPAK® SC-70 package
- Maximum on-resistance of 1.5 Ω at VGS = 2.5 V
 SiA456DJ
|
MOSFETs
SiHG47N60E
Single, 600 V N-Channel Power MOSFET
Features
- High performance E Series high-voltage Super Junction technology
- Maximum current of 47 A
- TO-247 packaging
- Maximum on-resistance of 0.064 Ω at VGS = 10 V
SiHG47N60E
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OPTOELECTRONICS
VSMB2020X01/VEMD2020X01
High Power and Sensitivity Infrared Emitter/PIN Photodiode
Features
- Radiant intensity of 40 mW/sr at IF = 100 mA
- Angle of half intensity of ± 12°
- Reverse light current of 12 µA with
Ee = 1 mW/cm2
- Angle of half sensitivity of ± 15°
VSMB2020X01
VEMD2020X01 |
OPTOELECTRONICS
CNY6x
Very High Isolation Voltage and Creepage Coupler
Features
- High isolation voltage as high as 13.9 kV
- 17 mm > creepage distance
- Internal insulation thickness > 3 mm
- For CAT IV installation ≤ 600 V mains voltage
CNY64, CNY65, CNY66 |
