Slide 1
Slide 2
Slide 3
Slide 4
Slide 5
Slide 6
Slide 7
Slide 8
Slide 9
Slide 10
Slide 11
Slide 12
Slide 13
Slide 14
Slide 15
Slide 16
Slide 17
Slide 18
Product List
In addition to a higher pulsed current rating and less conduction loss at higher current, the new generation EPC2012 has improved RDS(ON) at lower gate-source voltages. This results in allowing the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6V.
PTM Published on: 2011-10-28