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Product List
In addition to less conduction loss at higher current, the new-generation EPC2001 has improved RDS(ON) at lower gate-source voltages. The RoHS devices are fully enhanced at 40A with 4V on the gate. The older generation devices, the EPC1001 in this case, required 5V to be applied to the gate to be fully enhanced at 40A. This improvement allows the user to realize the low RDS(ON) capability of the FETs with greater margin between the applied gate voltage and the VGS(MAX) of 6V.
PTM Published on: 2011-10-28
