Slide 1
Slide 2
Slide 3
Slide 4
Slide 5
Slide 6
Slide 7
Slide 8
Slide 9
Slide 10
Slide 11
Slide 12
Slide 13
Slide 14
Slide 15
Slide 16
Slide 17
Slide 18
Slide 19
Slide 20
Slide 21
Slide 22
Slide 23
Slide 24
Slide 25
Slide 26
Slide 27
Slide 28
Product List
Associated Content
When comparing silicon devices such as IGBTs, SiC FETs deliver considerably lower conduction and switching losses. In fact, up to 74% lower switching losses can be seen with SiC FETs compared to IGBT + FRD solutions. The inverter efficiency map of an electric vehicle traction inverter shows the significant improvement in efficiency of SiC FETs in the high torque and low rotational speed range, along with an expanded high-efficiency area.
PTM Published on: 2023-03-15
