eGaN FETs have a very low resistance for the die size, and a low voltage drive. These devices reach full enhancement by about 4.0V – 4.5V, but have a maximum voltage of 6V. The design considerations are maintaining a narrow gate drive voltage range, particularly in a bootstrapped configuration, and minimizing gate overshoot while not compromising turn off time. The recommended range of operation is from 4.5V to 5.2V.