In summary, this product training module introduces ROHM’s 4^th Generation SiC MOSFETs, with low ON-resistance, high power efficiency and robust short-circuit ruggedness. Flexible gate drive voltages are supported for the conduction state, from 15 V to 18 V, and these devices can be easily turned off with 0 V gate bias. The MOSFETs are released as through-hole discrete products and offer opportunities for improving power system performance in a wide range of automotive and industrial applications.