In this application example, a buck converter is tested for power conversion efficiency using both 3^rd and 4^th Generation SiC MOSFET devices with a similar chip size. Because of its much lower ON-state resistance, the 4^th Generation MOSFET performs significantly better in the entire range of output power. The thermal images compare the two SiC MOSFETs operating at 5 kW output power level, demonstrating substantially less heat generation in the newer MOSFET due to its conduction loss improvement.