ROHM’s 4^th Generation SiC MOSFETs are available in 750 V and 1,200 V classes, with a range of ON-state resistance ratings. These discrete devices are offered in through-hole packages of TO247-3L and TO247-4L. The latter package supports Kelvin source connections for enhanced switching performance. The 4^th Generation products feature low ON-state resistance, low power losses, user-friendly gate drive design and high ruggedness against short-circuit events.