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Moving to 100 kHz operation, the performance gap becomes much wider. In this application, the IGBT solution cannot even achieve the full design rated power of 5 kW without overheating. Thermal performance limits the IGBT solution to 80% design output power. Efficiency is improved by 1.3% at 4 kW by the use of a SiC FET. This translates to a savings of 54 W in power dissipation and a much cooler overall system operating temperature.
PTM Published on: 2016-05-06
