Increasing the system switching frequency can lead to reduction in overall cost of the design due to shrinking of passive components. In particular, as the switching frequency increases, the size of the inductor in this boost converter can be reduced while maintaining a similar overall ripple current. Going one step further, the heatsink on the power switch can still be smaller as the SiC FET has a max operating temperature of 200°C which allows for 25°C greater design margin.