eGaN® Basics
EPC
This tutorial covers the basics of EPC’s enhancement mode gallium nitride (eGaN®) transistors. EPC’s eGaN® transistors give the design engineer a whole new spectrum of performance compared with silicon power MOSFETs. These advantages can be applied to gain efficiency advantages, size advantages, or a combination of both.
Related Parts
| Imagen | Número de pieza del fabricante | Descripción | Función | Integradas | Pieza/CI utilizado | Cantidad disponible | Precio | Ver detalles | |
|---|---|---|---|---|---|---|---|---|---|
 |  | EPC9001 | EVAL BOARD FOR EPC2015 | Unidad de medio puente H (FET externa) | No | EPC2015 | 0 - Inmediata | $90.00 | Ver detalles |
|  | EPC9017 | EVAL BOARD FOR EPC2001 | Unidad de medio puente H (FET externa) | No | EPC2001 | 0 - Inmediata | $118.75 | Ver detalles |
|  | EPC9027 | EVAL BOARD FOR EPC8007 | Unidad de medio puente H (FET externa) | No | EPC8007 | 0 - Inmediata | $143.75 | Ver detalles |
|  | EPC9002 | EVAL BOARD FOR EPC2001 | Unidad de medio puente H (FET externa) | No | EPC2001 | 0 - Inmediata | $90.00 | Ver detalles |
PTM Published on: 2010-09-27
