Goford Semiconductor
GS65R060Q4 Silicon Carbide (SiC) MOSFET - TO-247-4 650V 42A RDS(ON): TYPE 60mΩ at15V
Applications include EV motor drives, DC/DC Converters, Switch Mode Power Supplies, Power Factor Correction Modules, and Solar PV inverters.
GT023N10TL TOLL-8L Small Device Size, Large Device Current Carrying Capacity
Uses advanced trench technology to provide excellent RDS(ON), low gate charge. For switches Power supply, data centers, charging stations, power regulators, and UPS.
GT095N04D5 N-CHANNEL 40V 54A - Used in Power Switches, DC/DC Converters
The GT095N04D5 uses advanced trench technology to provide excellent RDSon, low gate charge. Used in wide variety of applications.
GT016N10TL TOLL-8 Low Device Conduction Resistance
GT016N10TL TOLL-8 VDS 100V; ID (at VGS = 10V) 362A; RDS(ON) (at VGS = 10V) <1.6mΩ; Ciss 10037 pF@VDS = 50V.
G040P04M P-CHANNEL 40V 180A - Used in Power Switches, DC/DC Converters
The G040P04M uses advanced trench technology to provide excellent RDSon, low gate charge. Used in wide variety of applications.
Acerca de Goford Semiconductor
Since found in 1995, Goford Semiconductor has been developing into a global company with offices in the USA, Australia, Shenzhen, Jiangsu, and Hong Kong. We have been always devoting in the R&D and sales of the power Mosfet products. We focus on the energy efficiency, mobility, and reliability to provide cost-effective products to the market. We are committed to trying our best to satisfy customers’ needs, provide the most reliable and cost-effective products, innovate and do better every day, partner with engineers and customers for mutual value, and work harder to realize our commitment.
