Learn how to reach the highest levels of power design performance, efficiency and cost effectiveness with UnitedSiC’s new 750V Gen 4 SiC (silicon carbide) FETs.

UnitedSiC introduces the industry's highest-performance, most-efficient and cost-effective SiC FETs today, the new Generation 4, UJ4C series. Get your new power design started right.

Our VP of Engineering, Dr. Anup Bhalla, covers the new Gen 4 750V SiC FETs, with specific focus on key technical content like: Performance benchmarking, Key datasheet specifications explained, Switching behavior, and Totem pole PFC application.

Join Mike Zhu, UnitedSiC Applications Engineer, and learn how a simple RC snubber can effectively control turn-off VDS spikes and ringing of SiC devices and be “surprisingly” more efficient than using a high Rgoff resistor.

UnitedSiC present two new SiC FETs, with RDS(ON) levels of 7mohm at 650V and 10mohm at 1200V, both delivering unprecedented levels of performance and efficiency for use in high-power.