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The low VCE(sat) BJT transistor solution does not require a blocking schottky diode because of the inherent design of it. Operating the BJT with a Beta of 100, the VCE(sat) would be 70mV. The base current, with a charging current of 1.0A, would be 10mA. This would result in power dissipation in the BJT of 70mW, and 50mW in the PMU. The total power dissipation would be 120mW.
PTM Published on: 2011-12-07
