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The RxxP22005D and RKZ-xx2005D series feature asymmetric outputs of +20 V and -5 V to efficiently bias SiC MOSFETS. Similarly, the RxxP21503D series provides asymmetric output voltages of +15 V and -3 V for the second generation of SiC MOSFETs. SiC MOSFETs have a high critical breakdown field and strong thermal performance.
PTM Published on: 2020-01-14
